S4D02120F SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; ITO220AC; 26W; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Max. load current: 14A
Max. forward voltage: 2.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Power dissipation: 26W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: ITO220AC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 132+ | 0.54 EUR |
| 2000+ | 0.37 EUR |
| 5000+ | 0.36 EUR |
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Technische Details S4D02120F SMC DIODE SOLUTIONS
Description: DIODE SIL CARB 1.2KV 9A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 160pF @ 0V, 1MHz, Current - Average Rectified (Io): 9A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote S4D02120F nach Preis ab 0.54 EUR bis 0.8 EUR
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S4D02120F | Hersteller : SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; ITO220AC; 26W; tube Mounting: THT Max. off-state voltage: 1.2kV Max. load current: 14A Max. forward voltage: 2.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 25A Power dissipation: 26W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: ITO220AC |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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S4D02120F | Hersteller : SMC Diode Solutions |
Description: DIODE SIL CARB 1.2KV 9A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 160pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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