S4D20120H SMC Diode Solutions


S4D20120A%20S4D20120H%20S4D20120G%20N2367%20REV.C.pdf
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARB 1200V 20A TO247AC
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
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10+5.49 EUR
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Technische Details S4D20120H SMC Diode Solutions

Description: DIODE SIL CARB 1200V 20A TO247AC, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AC, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 721pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky.