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S4D20120H

S4D20120H SMC Diode Solutions

S4D20120A%20S4D20120H%20S4D20120G%20N2367%20REV.C.pdf Hersteller: SMC Diode Solutions
Description: DIODE SIL CARB 1200V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
10+4.61 EUR
Mindestbestellmenge: 3
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Technische Details S4D20120H SMC Diode Solutions

Description: DIODE SIL CARB 1200V 20A TO247AC, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 721pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V.