S4PKHM3_A/I

S4PKHM3_A/I Vishay General Semiconductor - Diodes Division


s4pm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Technische Details S4PKHM3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 800V 4A TO277A, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).

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S4PKHM3_A/I S4PKHM3_A/I Hersteller : Vishay General Semiconductor s4pm.pdf Rectifiers 4A, 800V, SMPC STD, SM Rect
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