S5J-E3/57T Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 5A DO214AB, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).