S5M V7G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
| Anzahl | Privatkunde |
|---|---|
| 850+ | 0.87 EUR |
| 1700+ | 0.74 EUR |
| 2550+ | 0.65 EUR |
| 5950+ | 0.63 EUR |
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Technische Details S5M V7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard.
Weitere Produktangebote S5M V7G nach Preis ab 1.05 EUR bis 1.74 EUR
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S5M V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 5A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
auf Bestellung 15895 Stücke: Lieferzeit 10-14 Tag (e) |
|
| S5M V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 5A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 15895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.5 EUR |
| 100+ | 1.05 EUR |