S80KS5122GABHV023 Infineon Technologies
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Technische Details S80KS5122GABHV023 Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA, Packaging: Tape & Reel (TR), Package / Case: 24-VBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 1.7V ~ 2V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 200 MHz, Memory Format: PSRAM, Supplier Device Package: 24-FBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 35ns, Memory Interface: HyperBus, Access Time: 35 ns, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote S80KS5122GABHV023
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| S80KS5122GABHV023 | Hersteller : Infineon Technologies |
 PSRAM Sync Single Port 512M-bit 64M x 8 35ns 24-Pin FBGA T/R |
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S80KS5122GABHV023 | Hersteller : Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA Packaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S80KS5122GABHV023 | Hersteller : Infineon Technologies |
DRAM SPCM |
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| S80KS5122GABHV023 | Hersteller : INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |