Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > S8CJ-M3/I
S8CJ-M3/I

S8CJ-M3/I Vishay General Semiconductor - Diodes Division

s8cgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.36 EUR
7000+0.34 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details S8CJ-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 8A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Standard, Capacitance @ Vr, F: 79pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

Weitere Produktangebote S8CJ-M3/I nach Preis ab 0.42 EUR bis 1.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S8CJ-M3/I S8CJ-M3/I Vishay General Semiconductor - Diodes Division s8cgjkm.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 12817 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
21+0.85 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
S8CJ-M3/I S8CJ-M3/I Vishay Semiconductors s8cgjkm-1147902.pdf Rectifiers 8A, 600V SMC
auf Bestellung 10298 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
S8CJ-M3/I s8cgjkm.pdf
S8CJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 12817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.85 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
S8CJ-M3/I s8cgjkm-1147902.pdf
S8CJ-M3/I
Hersteller: Vishay Semiconductors
Rectifiers 8A, 600V SMC
auf Bestellung 10298 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH