SA2B-E3/5AT Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 154 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.96 EUR |
| 36+ | 0.72 EUR |
| 100+ | 0.41 EUR |
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Technische Details SA2B-E3/5AT Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 11pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 3 µA @ 100 V.
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SA2B-E3/5AT | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 100 V |
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