Technische Details SB1003M3-TL-W ON Semiconductor
Description: DIODE SCHOTTKY 30V 1A 3MCPH, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 10 ns, Technology: Schottky, Capacitance @ Vr, F: 27pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: 3-MCPH, Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A, Current - Reverse Leakage @ Vr: 15 µA @ 16 V.
Weitere Produktangebote SB1003M3-TL-W
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SB1003M3-TL-W | Hersteller : onsemi |
 Description: DIODE SCHOTTKY 30V 1A 3MCPHPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 27pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: 3-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
Produkt ist nicht verfügbar |
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SB1003M3-TL-W | Hersteller : onsemi |
Description: DIODE SCHOTTKY 30V 1A 3MCPH Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 27pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: 3-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
Produkt ist nicht verfügbar |