SB320-E3/73 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.96 EUR |
| 500+ | 0.82 EUR |
| 2000+ | 0.55 EUR |
| 10000+ | 0.54 EUR |
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Produktbewertung abgeben
Technische Details SB320-E3/73 Vishay Semiconductors
Description: DIODE SCHOTTKY 20V 3A DO201AD, Current - Reverse Leakage @ Vr: 500 µA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 20 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB).
Weitere Produktangebote SB320-E3/73
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SB320-E3/73 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 20V 3A DO201ADOperating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SB320-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 3A DO201AD Current - Reverse Leakage @ Vr: 500 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SB320-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO201AD
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Description: DIODE SCHOTTKY 20V 3A DO201AD
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB320-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Description: DIODE SCHOTTKY 20V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH