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SBC856BLT3G

SBC856BLT3G onsemi


bc856alt1-d.pdf Hersteller: onsemi
Description: TRANS PNP 65V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.07 EUR
20000+0.07 EUR
30000+0.06 EUR
50000+0.06 EUR
Mindestbestellmenge: 10000
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Technische Details SBC856BLT3G onsemi

Description: TRANS PNP 65V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 300 mW, Qualification: AEC-Q101.

Weitere Produktangebote SBC856BLT3G nach Preis ab 0.07 EUR bis 0.48 EUR

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SBC856BLT3G SBC856BLT3G Hersteller : onsemi bc856alt1-d.pdf Digital Transistors SS GP XSTR SPCL TR
auf Bestellung 61479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.37 EUR
12+0.24 EUR
100+0.13 EUR
1000+0.10 EUR
2500+0.09 EUR
10000+0.08 EUR
20000+0.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BLT3G SBC856BLT3G Hersteller : onsemi bc856alt1-d.pdf Description: TRANS PNP 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 103957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
61+0.29 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.09 EUR
Mindestbestellmenge: 38
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SBC856BLT3G SBC856BLT3G Hersteller : ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BLT3G SBC856BLT3G Hersteller : ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH