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SBCP56T3G

SBCP56T3G onsemi

bcp56t1-d.pdf
Hersteller: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.24 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SBCP56T3G onsemi

Description: TRANS NPN 80V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: SOT-223 (TO-261), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W, Qualification: AEC-Q101.

Weitere Produktangebote SBCP56T3G nach Preis ab 0.22 EUR bis 1.13 EUR

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SBCP56T3G SBCP56T3G onsemi bcp56t1-d.pdf Bipolar Transistors - BJT SS GP XSTR NPN 80V
auf Bestellung 7033 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.82 EUR
10+0.53 EUR
100+0.37 EUR
500+0.3 EUR
1000+0.28 EUR
2000+0.26 EUR
4000+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56T3G SBCP56T3G onsemi bcp56t1-d.pdf Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5670 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
26+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
2000+0.28 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56T3G bcp56t1-d.pdf
SBCP56T3G
Hersteller: onsemi
Bipolar Transistors - BJT SS GP XSTR NPN 80V
auf Bestellung 7033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.82 EUR
10+0.53 EUR
100+0.37 EUR
500+0.3 EUR
1000+0.28 EUR
2000+0.26 EUR
4000+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56T3G bcp56t1-d.pdf
SBCP56T3G
Hersteller: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
2000+0.28 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH