SBSS84LT1G ON Semiconductor
Hersteller: ON Semiconductor
P-канальний ПТ, Udss, В = 50, Id = 130 мА, Ptot, Вт = 0,225, Тип монт. = smd, Ciss, пФ @ Uds, В = 36 @ 5, Qg, нКл = 2,2 @ 10 В, Rds = 10 Ом @ 100 мA, 5 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 250 мкА,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
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Technische Details SBSS84LT1G ON Semiconductor
Description: MOSFET P-CH 50V 130MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 130mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 225mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V.
Weitere Produktangebote SBSS84LT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SBSS84LT1G | onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SBSS84LT1G | onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SBSS84LT1G | onsemi |
MOSFET PFET SPCL TR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SBSS84LT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBSS84LT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBSS84LT1G |
|
Hersteller: onsemi
MOSFET PFET SPCL TR
MOSFET PFET SPCL TR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH