SCH1337-TL-H ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - SCH1337-TL-H - Leistungs-MOSFET, p-Kanal, 30 V, 2 A, 0.115 ohm, SOT-563, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 800mW
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: No SVHC (14-Jun-2023)
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Technische Details SCH1337-TL-H ONSEMI
Description: ONSEMI - SCH1337-TL-H - Leistungs-MOSFET, p-Kanal, 30 V, 2 A, 0.115 ohm, SOT-563, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: -, euEccn: NLR, Verlustleistung: 800mW, Bauform - Transistor: SOT-563, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.115ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote SCH1337-TL-H nach Preis ab 0.31 EUR bis 2.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SCH1337-TL-H | Sanyo |
Description: P-CHANNEL MOSFET Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V |
auf Bestellung 715000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCH1337-TL-H | onsemi |
Description: MOSFET P-CH 30V 2A 6SCH Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V |
auf Bestellung 675000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCH1337-TL-H | onsemi |
MOSFETs SWITCHING DEVICE |
auf Bestellung 2375 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCH1337-TL-H | ON Semiconductor |
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auf Bestellung 9725 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SCH1337-TL-H |
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Hersteller: Sanyo
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
auf Bestellung 715000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1652+ | 0.33 EUR |
| SCH1337-TL-H |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 2A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Description: MOSFET P-CH 30V 2A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
auf Bestellung 675000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1652+ | 0.33 EUR |
| SCH1337-TL-H |
|
Hersteller: onsemi
MOSFETs SWITCHING DEVICE
MOSFETs SWITCHING DEVICE
auf Bestellung 2375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.39 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.36 EUR |
| 5000+ | 0.31 EUR |
| SCH1337-TL-H |
|
Hersteller: ON Semiconductor
auf Bestellung 9725 Stücke:
Lieferzeit 21-28 Tag (e)