SCH1430-TL-W onsemi
Hersteller: onsemiDescription: SCH1430 - POWER MOSFET, 20V, 2A,
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2637+ | 0.26 EUR |
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Technische Details SCH1430-TL-W onsemi
Description: SCH1430 - POWER MOSFET, 20V, 2A,, Packaging: Bulk, Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: SOT-563/SCH6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V.
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