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SCH2830-TL-E

SCH2830-TL-E onsemi


Hersteller: onsemi
Description: MOSFET P-CH 20V 1A 6SCH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2959+0.16 EUR
Mindestbestellmenge: 2959 Stücke
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Technische Details SCH2830-TL-E onsemi

Description: MOSFET P-CH 20V 1A 6SCH, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 600mW (Ta), Supplier Device Package: 6-SCH, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V.