
SCS110AGC ROHM SEMICONDUCTOR

Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 160A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 83W
Max. load current: 42A
Anzahl je Verpackung: 1 Stücke
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Technische Details SCS110AGC ROHM SEMICONDUCTOR
Description: DIODE SIL CARB 600V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 430pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Weitere Produktangebote SCS110AGC
Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS110AGC | Hersteller : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 430pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
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SCS110AGC | Hersteller : ROHM Semiconductor |
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Produkt ist nicht verfügbar |
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SCS110AGC | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 160A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 83W Max. load current: 42A |
Produkt ist nicht verfügbar |