SCS112AGC Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 600V 12A TO220AC
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 516pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details SCS112AGC Rohm Semiconductor
Description: DIODE SIL CARB 600V 12A TO220AC, Current - Reverse Leakage @ Vr: 240 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 516pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote SCS112AGC
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SCS112AGC | ROHM Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 12A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SCS112AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 48A Max. forward impulse current: 167A Power dissipation: 93W Kind of package: tube Heatsink thickness: max. 1.27mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SCS112AGC |
|
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 12A
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 12A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SCS112AGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH