Technische Details SCS206AJHRTLL Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 219pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-263AB, Operating Temperature - Junction: 175°C (Max), Grade: Automotive, Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A, Current - Reverse Leakage @ Vr: 120 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote SCS206AJHRTLL nach Preis ab 3.21 EUR bis 12.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SCS206AJHRTLL | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 6A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS206AJHRTLL | ROHM |
Description: ROHM - SCS206AJHRTLL - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-263AB Kapazitive Gesamtladung: 9 Durchschnittlicher Durchlassstrom: 6 Anzahl der Pins: 3 Pins Bauform - Diode: TO-263AB Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Wiederkehrende Spitzensperrspannung: 650 Produktpalette: - SVHC: Lead (08-Jul-2021) |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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SCS206AJHRTLL | Rohm Semiconductor |
Diode Schottky SiC 650V 6A 3-Pin(2+Tab) LPTL T/R Automotive AEC-Q101 |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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SCS206AJHRTLL | Rohm Semiconductor |
Diode Schottky SiC 650V 6A 3-Pin(2+Tab) LPTL T/R Automotive AEC-Q101 |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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SCS206AJHRTLL | ROHM Semiconductor |
SiC Schottky Diodes 650V 6A 9nC SiC SBD AEC-Q101 Qualified |
auf Bestellung 1036 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS206AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 2746 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 5.57 EUR |
| SCS206AJHRTLL |
|
Hersteller: ROHM
Description: ROHM - SCS206AJHRTLL - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-263AB
Kapazitive Gesamtladung: 9
Durchschnittlicher Durchlassstrom: 6
Anzahl der Pins: 3 Pins
Bauform - Diode: TO-263AB
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
Wiederkehrende Spitzensperrspannung: 650
Produktpalette: -
SVHC: Lead (08-Jul-2021)
Description: ROHM - SCS206AJHRTLL - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-263AB
Kapazitive Gesamtladung: 9
Durchschnittlicher Durchlassstrom: 6
Anzahl der Pins: 3 Pins
Bauform - Diode: TO-263AB
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
Wiederkehrende Spitzensperrspannung: 650
Produktpalette: -
SVHC: Lead (08-Jul-2021)
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 5.97 EUR |
| 47+ | 4.99 EUR |
| 100+ | 3.77 EUR |
| 500+ | 3.21 EUR |
| SCS206AJHRTLL |
|
Hersteller: Rohm Semiconductor
Diode Schottky SiC 650V 6A 3-Pin(2+Tab) LPTL T/R Automotive AEC-Q101
Diode Schottky SiC 650V 6A 3-Pin(2+Tab) LPTL T/R Automotive AEC-Q101
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.62 EUR |
| 29+ | 6.05 EUR |
| SCS206AJHRTLL |
|
Hersteller: Rohm Semiconductor
Diode Schottky SiC 650V 6A 3-Pin(2+Tab) LPTL T/R Automotive AEC-Q101
Diode Schottky SiC 650V 6A 3-Pin(2+Tab) LPTL T/R Automotive AEC-Q101
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.63 EUR |
| 29+ | 5.93 EUR |
| SCS206AJHRTLL |
|
Hersteller: ROHM Semiconductor
SiC Schottky Diodes 650V 6A 9nC SiC SBD AEC-Q101 Qualified
SiC Schottky Diodes 650V 6A 9nC SiC SBD AEC-Q101 Qualified
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.47 EUR |
| 10+ | 7.2 EUR |
| 100+ | 5.71 EUR |
| 500+ | 5.38 EUR |
| 1000+ | 4.9 EUR |
| SCS206AJHRTLL |
|
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2746 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.35 EUR |
| 10+ | 8.29 EUR |
| 100+ | 5.99 EUR |
| 500+ | 5.01 EUR |