SCS208AJHRTLL Rohm Semiconductor

Description: DIODE SIL CARB 650V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 291pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB, Operating Temperature - Junction: 175°C (Max), Grade: Automotive, Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A, Current - Reverse Leakage @ Vr: 160 µA @ 600 V, Qualification: AEC-Q101.