SCS210AGC17 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 7.85 EUR |
| 10+ | 4.17 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.78 EUR |
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Technische Details SCS210AGC17 ROHM Semiconductor
Description: DIODE SIC 650V 10A TO220ACFP, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220ACFP, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 365pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10.
Weitere Produktangebote SCS210AGC17 nach Preis ab 3.64 EUR bis 7.88 EUR
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SCS210AGC17 | Hersteller : Rohm Semiconductor |
 Description: DIODE SIC 650V 10A TO220ACFPCurrent - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 365pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 |
auf Bestellung 1909 Stücke: Lieferzeit 10-14 Tag (e) |
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