SCS210ANTRL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 650V, 10A, SMD, SILICON-CARBIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS210ANTRL Rohm Semiconductor
Description: 650V, 10A, SMD, SILICON-CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 360pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Weitere Produktangebote SCS210ANTRL nach Preis ab 3.56 EUR bis 9.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCS210ANTRL | Rohm Semiconductor |
Description: 650V, 10A, SMD, SILICON-CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 360pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SCS210ANTRL | ROHM Semiconductor |
SiC Schottky Diodes RECT 650V 10A SM SIC SKY |
auf Bestellung 891 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCS210ANTRL |
|
Hersteller: Rohm Semiconductor
Description: 650V, 10A, SMD, SILICON-CARBIDE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: 650V, 10A, SMD, SILICON-CARBIDE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.13 EUR |
| 10+ | 6.07 EUR |
| 100+ | 4.33 EUR |
| 500+ | 4.12 EUR |
| SCS210ANTRL |
|
Hersteller: ROHM Semiconductor
SiC Schottky Diodes RECT 650V 10A SM SIC SKY
SiC Schottky Diodes RECT 650V 10A SM SIC SKY
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.23 EUR |
| 10+ | 6.14 EUR |
| 100+ | 4.88 EUR |
| 500+ | 4.33 EUR |
| 1000+ | 3.67 EUR |
| 2000+ | 3.56 EUR |