SCS210KGHRC ROHM Semiconductor

Description: DIODE SIL CARB 1200V 10A TO220AC, Qualification: AEC-Q101, Voltage - DC Reverse (Vr) (Max): 1200 V, Grade: Automotive, Reverse Recovery Time (trr): 0 ns, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.