SCS210KNHRTRL ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC Schottky Diodes 1200V, 10A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package)
| Anzahl | Preis |
|---|---|
| 1+ | 12.04 EUR |
| 10+ | 8.48 EUR |
| 100+ | 7.08 EUR |
| 500+ | 6.53 EUR |
| 1000+ | 5.54 EUR |
| 2000+ | 5.49 EUR |
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Technische Details SCS210KNHRTRL ROHM Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 10A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 530pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: LPDS, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote SCS210KNHRTRL nach Preis ab 7.56 EUR bis 13.39 EUR
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SCS210KNHRTRL | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 10A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 530pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 959 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS210KNHRTRL | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 10A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 530pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
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