Technische Details SCS215AEC ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 15A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A, Current - Reverse Leakage @ Vr: 300 µA @ 600 V.
Weitere Produktangebote SCS215AEC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SCS215AEC | Hersteller : Rohm |
 Schottky Diodes & Rectifiers SiC, SBD 650V 15A TO-247 Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |
||
 |
SCS215AEC | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 15A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
Produkt ist nicht verfügbar |
|
 |
SCS215AEC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. forward impulse current: 200A Kind of package: tube Max. load current: 65A Power dissipation: 110W |
Produkt ist nicht verfügbar |