SCS215AEGC11 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 13.08 EUR |
| 10+ | 7.52 EUR |
| 100+ | 6.44 EUR |
| 450+ | 6.16 EUR |
| 900+ | 6.14 EUR |
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Technische Details SCS215AEGC11 ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 15A TO247, Current - Reverse Leakage @ Vr: 300 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCS215AEGC11 nach Preis ab 8.38 EUR bis 14.52 EUR
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SCS215AEGC11 | Hersteller : Rohm Semiconductor |
 Description: DIODE SIL CARBIDE 650V 15A TO247Current - Reverse Leakage @ Vr: 300 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 550pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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