SCS215AGC ROHM Semiconductor
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Technische Details SCS215AGC ROHM Semiconductor
Description: DIODE SIC 650V 15A TO220ACFP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-220ACFP, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A, Current - Reverse Leakage @ Vr: 300 µA @ 600 V.
Weitere Produktangebote SCS215AGC
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| SCS215AGC | Hersteller : ROHM SEMICONDUCTOR |
 SCS215AGC THT Schottky diodes |
Produkt ist nicht verfügbar |
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SCS215AGC | Hersteller : Rohm Semiconductor |
Description: DIODE SIC 650V 15A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
Produkt ist nicht verfügbar |