SCS215AGC17 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 15A TO220ACFP
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 8.76 EUR |
| 10+ | 5.94 EUR |
| 100+ | 5.25 EUR |
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Technische Details SCS215AGC17 Rohm Semiconductor
Description: DIODE SIC 650V 15A TO220ACFP, Current - Reverse Leakage @ Vr: 300 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220ACFP, Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote SCS215AGC17 nach Preis ab 5.42 EUR bis 11.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS215AGC17 | ROHM Semiconductor |
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen |
auf Bestellung 6407 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ROHM Semiconductor
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen
auf Bestellung 6407 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 11.07 EUR |
| 10+ | 6.46 EUR |
| 100+ | 5.42 EUR |