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SCS215AMC

SCS215AMC ROHM Semiconductor

datasheet?p=SCS215AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers SiC, SBD 650V 15A TO-220FM
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Technische Details SCS215AMC ROHM Semiconductor

Description: DIODE SIL CARB 650V 12A TO220FM, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 438pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220FM, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A, Current - Reverse Leakage @ Vr: 240 µA @ 600 V.

Weitere Produktangebote SCS215AMC

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SCS215AMC SCS215AMC Hersteller : Rohm Semiconductor datasheet?p=SCS215AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
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