SCS215AMC ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 11.19 EUR |
| 10+ | 10.12 EUR |
| 100+ | 8.38 EUR |
| 500+ | 7.3 EUR |
| 1000+ | 7 EUR |
| 2000+ | 6.71 EUR |
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Technische Details SCS215AMC ROHM Semiconductor
Description: DIODE SIL CARB 650V 12A TO220FM, Current - Reverse Leakage @ Vr: 240 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 438pF @ 1V, 1MHz, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.
Weitere Produktangebote SCS215AMC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SCS215AMC | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 12A TO220FMCurrent - Reverse Leakage @ Vr: 240 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220FM Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 438pF @ 1V, 1MHz Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SCS215AMC |
|
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220FM
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 650V 12A TO220FM
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH