Technische Details SCS220AE2C ROHM Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247, Current - Average Rectified (Io) (per Diode): 10A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCS220AE2C
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS220AE2C | Rohm Semiconductor |
 Description: DIODE ARRAY SIC 650V 10A TO-247Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-247 Current - Average Rectified (Io) (per Diode): 10A (DC) Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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Im Einkaufswagen Stück im Wert von UAH |
| SCS220AE2C |
|
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 650V 10A TO-247
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH