SCS220AEGC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 15.07 EUR |
| 10+ | 10.36 EUR |
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Technische Details SCS220AEGC11 Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247, Current - Reverse Leakage @ Vr: 400 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCS220AEGC11 nach Preis ab 7.87 EUR bis 15.88 EUR
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SCS220AEGC11 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes RECT 650V 20A RDL SIC SKY |
auf Bestellung 1646 Stücke: Lieferzeit 10-14 Tag (e) |
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