SCS220AMC ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 15.95 EUR |
| 10+ | 14.41 EUR |
| 100+ | 11.95 EUR |
| 500+ | 10.38 EUR |
| 1000+ | 9.43 EUR |
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Technische Details SCS220AMC ROHM Semiconductor
Description: DIODE SIL CARB 650V 20A TO220FM, Current - Reverse Leakage @ Vr: 400 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Packaging: Tube, Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max).
Weitere Produktangebote SCS220AMC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SCS220AMC | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 20A TO220FMCurrent - Reverse Leakage @ Vr: 400 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Packaging: Tube Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 730pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SCS220AMC |
|
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220FM
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Description: DIODE SIL CARB 650V 20A TO220FM
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH