Technische Details SCS220KE2GC11 Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247N, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote SCS220KE2GC11 nach Preis ab 12.27 EUR bis 31.12 EUR
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SCS220KE2GC11 | Rohm Semiconductor |
 Diode Schottky SiC 1.2KV 20A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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SCS220KE2GC11 | ROHM Semiconductor |
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 20A, 2nd Gen |
auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS220KE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC 1200V 10A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 756 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCS220KE2GC11 |
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Hersteller: Rohm Semiconductor
Diode Schottky SiC 1.2KV 20A 3-Pin(3+Tab) TO-247N Tube
Diode Schottky SiC 1.2KV 20A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 24.35 EUR |
| 10+ | 22.63 EUR |
| 50+ | 15.08 EUR |
| 100+ | 12.74 EUR |
| 200+ | 12.27 EUR |
| SCS220KE2GC11 |
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Hersteller: ROHM Semiconductor
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 20A, 2nd Gen
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 20A, 2nd Gen
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.32 EUR |
| 10+ | 18.64 EUR |
| 100+ | 16.9 EUR |
| SCS220KE2GC11 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.12 EUR |
| 30+ | 18.71 EUR |
| 120+ | 16.51 EUR |
| 510+ | 16.39 EUR |