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SCS220KE2GC11

SCS220KE2GC11 ROHM Semiconductor

datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 20A, 2nd Gen
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.48 EUR
10+15.66 EUR
100+14.2 EUR
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Technische Details SCS220KE2GC11 ROHM Semiconductor

Description: DIODE ARR SIC 1200V 10A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247N, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.

Weitere Produktangebote SCS220KE2GC11 nach Preis ab 13.77 EUR bis 26.15 EUR

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SCS220KE2GC11 SCS220KE2GC11 Rohm Semiconductor datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 756 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.15 EUR
30+15.72 EUR
120+13.87 EUR
510+13.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCS220KE2GC11 datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.15 EUR
30+15.72 EUR
120+13.87 EUR
510+13.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH