Technische Details SCS220KGC ROHM Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC, Packaging: Tube, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1060pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2.
Weitere Produktangebote SCS220KGC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SCS220KGC | Rohm Semiconductor |
 Description: DIODE SIL CARB 1200V 20A TO220ACPackaging: Tube Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220AC Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1060pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 |
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Im Einkaufswagen Stück im Wert von UAH |
| SCS220KGC |
|
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH