SCS220KNTRL ROHM Semiconductor
Hersteller: ROHM SemiconductorSiC Schottky Diodes Discrete Semiconductors, SiC Power Devices, 1200V, 20A, SMD, Silicon-carbide (SiC) SBD
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.83 EUR |
| 10+ | 15.28 EUR |
| 100+ | 12.72 EUR |
| 250+ | 11.97 EUR |
| 500+ | 11.23 EUR |
| 1000+ | 10.1 EUR |
| 2000+ | 9.63 EUR |
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Technische Details SCS220KNTRL ROHM Semiconductor
Description: 1200V, 20A, SMD, SILICON-CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV.
Weitere Produktangebote SCS220KNTRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS220KNTRL | Hersteller : Rohm Semiconductor |
Description: 1200V, 20A, SMD, SILICON-CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV |
Produkt ist nicht verfügbar |
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SCS220KNTRL | Hersteller : Rohm Semiconductor |
Description: 1200V, 20A, SMD, SILICON-CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV |
Produkt ist nicht verfügbar |