SCS240KE2GC11 Rohm Semiconductor
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 30.49 EUR |
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Technische Details SCS240KE2GC11 Rohm Semiconductor
Description: DIODE ARR SIC 1200V 20A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A (DC), Supplier Device Package: TO-247N, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V.
Weitere Produktangebote SCS240KE2GC11 nach Preis ab 14.24 EUR bis 37.15 EUR
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SCS240KE2GC11 | Hersteller : Rohm Semiconductor |
 Diode Schottky SiC 1.2KV 40A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SCS240KE2GC11 | Hersteller : Rohm Semiconductor |
Description: DIODE ARR SIC 1200V 20A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS240KE2GC11 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 40A, 2nd Gen |
auf Bestellung 1282 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCS240KE2GC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 160A Max. forward impulse current: 620A Leakage current: 0.4mA Power dissipation: 420W Kind of package: tube |
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