SCS304AMC7G Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 4A TO220FM
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 6.12 EUR |
| 50+ | 3.29 EUR |
| 100+ | 2.84 EUR |
| 500+ | 2.57 EUR |
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Technische Details SCS304AMC7G Rohm Semiconductor
Description: DIODE SIL CARB 650V 4A TO220FM, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 200pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube.
Weitere Produktangebote SCS304AMC7G nach Preis ab 2.39 EUR bis 6.2 EUR
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SCS304AMC7G | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes RECT 650V 4A RDL SIC SKY |
auf Bestellung 973 Stücke: Lieferzeit 10-14 Tag (e) |
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