SCS306AMC Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.16 EUR |
50+ | 4.88 EUR |
100+ | 4.18 EUR |
500+ | 3.72 EUR |
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Technische Details SCS306AMC Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220FM, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220FM, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Weitere Produktangebote SCS306AMC nach Preis ab 3.03 EUR bis 6.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS306AMC | Hersteller : ROHM Semiconductor | Schottky Diodes & Rectifiers SIC SBD 650V 6A 30W TO-220FM |
auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS306AMC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 22A Semiconductor structure: single diode Max. forward voltage: 1.71V Case: TO220FP-2 Kind of package: tube Leakage current: 120µA Max. forward impulse current: 170A Power dissipation: 30W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCS306AMC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 22A Semiconductor structure: single diode Max. forward voltage: 1.71V Case: TO220FP-2 Kind of package: tube Leakage current: 120µA Max. forward impulse current: 170A Power dissipation: 30W |
Produkt ist nicht verfügbar |