SCS310AMC7G ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 5.72 EUR |
| 100+ | 4.63 EUR |
| 500+ | 4.12 EUR |
| 1000+ | 3.63 EUR |
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Technische Details SCS310AMC7G ROHM Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube.
Weitere Produktangebote SCS310AMC7G nach Preis ab 3.72 EUR bis 9.36 EUR
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SCS310AMC7G | Hersteller : Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 10A TO220FMCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220FM Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 500pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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