SCS310AMC7G ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.29 EUR |
| 10+ | 6.81 EUR |
| 100+ | 5.51 EUR |
| 500+ | 4.9 EUR |
| 1000+ | 4.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS310AMC7G ROHM Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube.
Weitere Produktangebote SCS310AMC7G nach Preis ab 4.43 EUR bis 11.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCS310AMC7G | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 10A TO220FMCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220FM Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 500pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCS310AMC7G |
|
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SIL CARB 650V 10A TO220FM
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.14 EUR |
| 50+ | 5.83 EUR |
| 100+ | 5.32 EUR |
| 500+ | 4.43 EUR |