SCS315AHGC9 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 2+ | 13.01 EUR |
| 50+ | 10.37 EUR |
| 100+ | 9.28 EUR |
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Technische Details SCS315AHGC9 Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 750pF @ 1V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-220ACP, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 75 µA @ 650 V.
Weitere Produktangebote SCS315AHGC9 nach Preis ab 7.18 EUR bis 14.1 EUR
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SCS315AHGC9 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes 650V;15A;93W SiC SBD TO-220ACP |
auf Bestellung 507 Stücke: Lieferzeit 10-14 Tag (e) |
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