SCS320AGC16 ROHM Semiconductor
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.93 EUR |
| 10+ | 9.36 EUR |
| 100+ | 7.81 EUR |
| 250+ | 7.50 EUR |
| 500+ | 6.88 EUR |
| 1000+ | 6.20 EUR |
| 2500+ | 5.93 EUR |
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Technische Details SCS320AGC16 ROHM Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1000pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220ACFP, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote SCS320AGC16
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS320AGC16 | Hersteller : CODIXX AG |
Description: DIODE SIL CARB 650V 20A TO220ACP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
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