SCS320AGHRC16 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 650V, 20A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACGE
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
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Technische Details SCS320AGHRC16 Rohm Semiconductor
Description: 650V, 20A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1000pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220ACGE, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote SCS320AGHRC16
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SCS320AGHRC16 | ROHM Semiconductor |
SiC Schottky Diodes 650V, 20A, THD, Silicon-carbide (SiC) SBD : Switching loss reduced, enabling high-speed switching. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SCS320AGHRC16 |
|
Hersteller: ROHM Semiconductor
SiC Schottky Diodes 650V, 20A, THD, Silicon-carbide (SiC) SBD : Switching loss reduced, enabling high-speed switching.
SiC Schottky Diodes 650V, 20A, THD, Silicon-carbide (SiC) SBD : Switching loss reduced, enabling high-speed switching.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH