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Technische Details SCS320KE2C11 Rohm Semiconductor
Description: 1200V, 20A, 3-PIN THD, SILICON-C, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-247N, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V.
Weitere Produktangebote SCS320KE2C11
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SCS320KE2C11 | Hersteller : Rohm Semiconductor |
Description: 1200V, 20A, 3-PIN THD, SILICON-CPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
Produkt ist nicht verfügbar |
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SCS320KE2C11 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes 1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD |
Produkt ist nicht verfügbar |


