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SCS320KE2HRC11

SCS320KE2HRC11 Rohm Semiconductor


scs320ke2hre.pdf
Hersteller: Rohm Semiconductor
Diode Schottky SiC 1.2KV 20A
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Technische Details SCS320KE2HRC11 Rohm Semiconductor

Description: 1200V, 20A, 3-PIN THD, SILICON-C, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-247N, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V, Qualification: AEC-Q101.

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SCS320KE2HRC11 SCS320KE2HRC11 Hersteller : Rohm Semiconductor scs320ke2hr-e.pdf Description: 1200V, 20A, 3-PIN THD, SILICON-C
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
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SCS320KE2HRC11 SCS320KE2HRC11 Hersteller : ROHM Semiconductor scs320ke2hr-e.pdf SiC Schottky Diodes 1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive
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Im Einkaufswagen  Stück im Wert von  UAH