SCS320KGHRC16 Rohm Semiconductor

Description: 1200V, 20A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1030pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220ACGE, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V, Qualification: AEC-Q101.