| Anzahl | Preis |
|---|---|
| 12+ | 12.32 EUR |
| 25+ | 11.58 EUR |
| 50+ | 10.88 EUR |
| 100+ | 10.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS320KNHRTRL Rohm Semiconductor
Description: 1200V, 20A, SMD, SILICON-CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1030pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263L, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote SCS320KNHRTRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SCS320KNHRTRL | Hersteller : Rohm Semiconductor |
 Description: 1200V, 20A, SMD, SILICON-CARBIDEPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1030pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
|
|
SCS320KNHRTRL | Hersteller : Rohm Semiconductor |
Description: 1200V, 20A, SMD, SILICON-CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1030pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
 |
SCS320KNHRTRL | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes 1200V, 20A, SMD, Silicon-carbide (SiC) SBD for Automotive : Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package) |
Produkt ist nicht verfügbar |