SCT025W120G3AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.14 EUR |
| 10+ | 21.24 EUR |
| 100+ | 19.92 EUR |
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Technische Details SCT025W120G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V, Power Dissipation (Max): 388W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: HiP247™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT025W120G3AG nach Preis ab 18.71 EUR bis 34.7 EUR
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SCT025W120G3AG | STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V Power Dissipation (Max): 388W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: HiP247™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT025W120G3AG |
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Hersteller: STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 5mA
Supplier Device Package: HiP247™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
Qualification: AEC-Q101
Description: AUTOMOTIVE-GRADE SILICON CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 5mA
Supplier Device Package: HiP247™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.7 EUR |
| 30+ | 21.57 EUR |
| 60+ | 20.02 EUR |
| 120+ | 18.71 EUR |