SCT10N120H STMicroelectronics

Description: SICFET N-CH 1200V 12A H2PAK-2, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Obsolete, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).