Technische Details SCT2080KEHRC11 ROHM Semiconductor
Description: SICFET N-CH 1200V 40A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V, Vgs(th) (Max) @ Id: 4V @ 4.4mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT2080KEHRC11 nach Preis ab 33.77 EUR bis 104.52 EUR
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SCT2080KEHRC11 | Rohm Semiconductor |
 Description: SICFET N-CH 1200V 40A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17361 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2080KEHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2080KEHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT2080KEHRC11 |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17361 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.68 EUR |
| SCT2080KEHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 58.1 EUR |
| 5+ | 46.56 EUR |
| 10+ | 42.55 EUR |
| 50+ | 35.96 EUR |
| 100+ | 33.77 EUR |
| SCT2080KEHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 104.52 EUR |
| 3+ | 99.47 EUR |
| 5+ | 94.34 EUR |
| 10+ | 89.75 EUR |
| 20+ | 86.26 EUR |
| 50+ | 83.12 EUR |
| 100+ | 79.61 EUR |
| 250+ | 78.25 EUR |