SCT2080KEHRC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3+ | 59.44 EUR |
| 5+ | 47.64 EUR |
| 10+ | 43.53 EUR |
| 50+ | 36.79 EUR |
| 100+ | 34.55 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details SCT2080KEHRC11 Rohm Semiconductor
Description: SICFET N-CH 1200V 40A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V, Vgs(th) (Max) @ Id: 4V @ 4.4mA, Supplier Device Package: TO-247N, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT2080KEHRC11 nach Preis ab 47.96 EUR bis 106.92 EUR
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SCT2080KEHRC11 | ROHM Semiconductor |
 SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2080KEHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 40A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Supplier Device Package: TO-247N Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 17353 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2080KEHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT2080KEHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; 1.2kV; 40A; 262W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 262W Gate charge: 106nC Technology: SiC Drain current: 40A Kind of channel: enhancement Drain-source voltage: 1.2kV Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: -6...22V On-state resistance: 80mΩ |
auf Bestellung 712 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SCT2080KEHRC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N
SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 75.46 EUR |
| 10+ | 52.59 EUR |
| 100+ | 51.37 EUR |
| SCT2080KEHRC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 17353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 77.27 EUR |
| 30+ | 51.27 EUR |
| 60+ | 48.18 EUR |
| 120+ | 47.96 EUR |
| SCT2080KEHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 106.92 EUR |
| 3+ | 101.76 EUR |
| 5+ | 96.51 EUR |
| 10+ | 91.82 EUR |
| 20+ | 88.25 EUR |
| 50+ | 85.03 EUR |
| 100+ | 81.44 EUR |
| 250+ | 80.05 EUR |
| SCT2080KEHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 1.2kV; 40A; 262W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 262W
Gate charge: 106nC
Technology: SiC
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -6...22V
On-state resistance: 80mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 1.2kV; 40A; 262W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 262W
Gate charge: 106nC
Technology: SiC
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -6...22V
On-state resistance: 80mΩ
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)