SCT20N120AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.35 EUR |
| 10+ | 17.36 EUR |
| 100+ | 14.99 EUR |
| 1200+ | 12.07 EUR |
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Technische Details SCT20N120AG STMicroelectronics
Description: SICFET N-CH 1200V 20A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: HiP247™, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT20N120AG nach Preis ab 36.68 EUR bis 36.68 EUR
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SCT20N120AG | STMicroelectronics |
Description: SICFET N-CH 1200V 20A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: HiP247™ Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT20N120AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT20N120AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 20 A, 1.2 kV, 0.169 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 153W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 200°C Drain-Source-Durchgangswiderstand: 0.169ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SCT20N120AG |
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Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 20A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: HiP247™
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 20A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: HiP247™
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.68 EUR |
| SCT20N120AG |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - SCT20N120AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 20 A, 1.2 kV, 0.169 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 153W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 200°C
Drain-Source-Durchgangswiderstand: 0.169ohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - SCT20N120AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 20 A, 1.2 kV, 0.169 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 153W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 200°C
Drain-Source-Durchgangswiderstand: 0.169ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)